N-channel transistor IRFD120, 0.94A, 1.3A, 250uA, 0.27 Ohms, DIP, DH-1 house, DIP-4, 100V. ID (T=100°C): 0.94A. ID (T=25°C): 1.3A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 360pF. Channel type: N. Cost): 150pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 10A. Number of terminals: 4. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 1.3W. Quantity per case: 1. RoHS: yes. Td(off): 18 ns. Td(on): 6.8 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14