N-channel transistor IRFD110PBF, DIP-4, 100V, 60V, 100V. Housing: DIP-4. Vdss (Drain to Source Voltage): 100V. Drain-source voltage (Vds): 60V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Channel type: N. Ciss Gate Capacitance [pF]: 180pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 0.6A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 1A. Information: -. MSL: -. Manufacturer's marking: IRFD110PBF. Max drain current: 0.8A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 1.3W. Mounting Type: THT. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. Polarity: MOSFET N. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 6.9ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14