N-channel transistor IRFD110, DIP, 0.71A, 1A, 250uA, 0.54 Ohms, DH-1 house, DIP-4, 100V. Housing: DIP. ID (T=100°C): 0.71A. ID (T=25°C): 1A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 180pF. Channel type: N. Charge: 8.3nC. Cost): 81pF. Drain current: 700mA, 0.71A. Drain-source protection: yes. Drain-source voltage: 100V. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 8A. Manufacturer's marking: IRFD110PBF. Number of terminals: 4. On-state resistance: 0.54 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 1.3W. Polarity: unipolar. Power: 1.3W. Quantity per case: 1. RoHS: yes. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14