N-channel transistor IRFD014, 1.2A, 1.7A, 0.025mA, 250uA, 0.20 Ohms, DIP, DH-1 house, DIP-4, 60V. ID (T=100°C): 1.2A. ID (T=25°C): 1.7A. Idss: 0.025mA. Idss (max): 250uA. On-resistance Rds On: 0.20 Ohms. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 310pF. Channel type: N. Cost): 160pF. Drain-source protection: yes. Function: td(on) 10ns, td(off) 13ns. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 14A. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. Quantity per case: 1. RoHS: yes. Td(off): 13 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 70 ns. Type of transistor: FET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14