N-channel transistor IRFBF20S, 1.1A, 1.7A, 500uA, 8 Ohms, TO-262 ( I2-PAK ), TO-262, 900V. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. On-resistance Rds On: 8 Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 900V. Assembly/installation: surface-mounted component (SMD). C(in): 490pF. Channel type: N. Cost): 55pF. Drain-source protection: zener diode. Function: Dynamic dv/dt Rating. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 6.8A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 54W. Quantity per case: 1. RoHS: yes. Td(off): 56 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 350 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14