N-channel transistor IRFBE30PBF, TO-220AB, 800V. Housing: TO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 800V. Assembly/installation: THT. Charge: 78nC. Ciss Gate Capacitance [pF]: 1300pF. Component family: MOSFET, N-MOS. Conditioning: tubus. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 4.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 2.5A. Drain current: 4A, 2.6A. Drain-source voltage: 800V. Gate breakdown voltage Ugs [V]: 4 v. Gate-source voltage: ±20V. Manufacturer's marking: IRFBE30PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Number of terminals: 3. On-state resistance: 3 Ohms. Polarity: unipolar. Power: 125W. RoHS: yes. Switch-off delay tf[nsec.]: 82 ns. Switch-on time ton [nsec.]: 12 ns. Type of transistor: N-MOSFET. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14