N-channel transistor IRFBE30, 2.6A, 4.1A, 500uA, 3 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 2.6A. ID (T=25°C): 4.1A. Idss (max): 500uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Cost): 310pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 16A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Spec info: Dynamic dv/dt Rating. Td(off): 82 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14