N-channel transistor IRFBC40PBF, 600V, 1.2 Ohms, 600V

N-channel transistor IRFBC40PBF, 600V, 1.2 Ohms, 600V

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Quantity in stock: 34

N-channel transistor IRFBC40PBF, 600V, 1.2 Ohms, 600V. Drain-source voltage (Vds): 600V. Housing (JEDEC standard): -. On-resistance Rds On: 1.2 Ohms. Drain-source voltage Uds [V]: 600V. Channel type: N. Ciss Gate Capacitance [pF]: 1300pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 6.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 3.7A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRFBC40PBF. Max drain current: 6.2A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Number of terminals: 3. Power: 125W. RoHS: yes. Switch-off delay tf[nsec.]: 55 ns. Switch-on time ton [nsec.]: 13 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFBC40PBF
21 parameters
Drain-source voltage (Vds)
600V
On-resistance Rds On
1.2 Ohms
Drain-source voltage Uds [V]
600V
Channel type
N
Ciss Gate Capacitance [pF]
1300pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
6.2A
Drain current through resistor Rds [Ohm] @ Ids [A]
1.2 Ohms @ 3.7A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRFBC40PBF
Max drain current
6.2A
Max temperature
+150°C.
Maximum dissipation Ptot [W]
125W
Number of terminals
3
Power
125W
RoHS
yes
Switch-off delay tf[nsec.]
55 ns
Switch-on time ton [nsec.]
13 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
Vishay (ir)