N-channel transistor IRFB9N65A, 5.4A, 8.5A, 8.5A, 0.93 Ohms, TO-220, TO-220AB, 650V. ID (T=100°C): 5.4A. ID (T=25°C): 8.5A. Idss (max): 8.5A. On-resistance Rds On: 0.93 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. Channel type: N. Function: Dynamic dv/dt Rating. Pd (Power Dissipation, Max): 167W. Quantity per case: 1. Technology: HEXFET Power MOSFET. Type of transistor: MOSFET. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14