N-channel transistor IRFB9N60A, 5.8A, 9.2A, 250uA, 0.75 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 250uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1400pF. Channel type: N. Cost): 180pF. Drain-source protection: zener diode. Function: Dynamic dv/dt Rating. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 37A. Number of terminals: 3. Operating temperature: -50...+150°C. Pd (Power Dissipation, Max): 170W. Quantity per case: 1. RoHS: yes. Spec info: High-speed switching. Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:34