N-channel transistor IRFB52N15D, 36A, 51A, 250uA, 0.032 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 36A. ID (T=25°C): 51A. Idss (max): 250uA. On-resistance Rds On: 0.032 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. Assembly/installation: PCB through-hole mounting. C(in): 2770pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 590pF. Drain-source protection: yes. Function: High frequency DC-DC converters, Plasma Display. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 230A. Marking on the case: FB52N15D. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 230W. Quantity per case: 1. RoHS: yes. Td(off): 28 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14