N-channel transistor IRFB4710PBF, TO-220AB, 100V

N-channel transistor IRFB4710PBF, TO-220AB, 100V

Quantity
Unit price
1+
3.93$
Quantity in stock: 141

N-channel transistor IRFB4710PBF, TO-220AB, 100V. Housing: TO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 6160pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 75A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 45A. Gate breakdown voltage Ugs [V]: 5.5V. Manufacturer's marking: IRFB4710PBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 200W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 41 ns. Switch-on time ton [nsec.]: 35 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFB4710PBF
16 parameters
Housing
TO-220AB
Drain-source voltage Uds [V]
100V
Ciss Gate Capacitance [pF]
6160pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
75A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.011 Ohms @ 45A
Gate breakdown voltage Ugs [V]
5.5V
Manufacturer's marking
IRFB4710PBF
Max temperature
+175°C.
Maximum dissipation Ptot [W]
200W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
41 ns
Switch-on time ton [nsec.]
35 ns
Original product from manufacturer
International Rectifier