N-channel transistor IRFB4710, 53A, 75A, 250uA, 0.011 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 53A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 6160pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 440pF. Drain-source protection: zener diode. Function: High frequency DC-DC converts. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 300A. Marking on the case: FB4710. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Td(off): 41 ns. Td(on): 35 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. Vgs(th) min.: 3.5V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14