N-channel transistor IRFB4229, 33A, 46A, 1mA, 38m Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 33A. ID (T=25°C): 46A. Idss (max): 1mA. On-resistance Rds On: 38m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. Assembly/installation: PCB through-hole mounting. C(in): 4560pF. Channel type: N. Cost): 390pF. Drain-source protection: zener diode. Function: Class-D Audio Amplifier 300W-500W (Half-bridge). G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 20uA. Id(imp): 180A. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 330W. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14