N-channel transistor IRFB4228, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V

N-channel transistor IRFB4228, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V

Quantity
Unit price
1-4
5.08$
5-24
4.54$
25-49
4.17$
50-99
3.90$
100+
3.46$
Quantity in stock: 40

N-channel transistor IRFB4228, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 1mA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. Assembly/installation: PCB through-hole mounting. C(in): 4530pF. Channel type: N. Cost): 550pF. Drain-source protection: zener diode. Function: PDP Switch. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 20uA. Id(imp): 330A. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 330W. Quantity per case: 1. RoHS: yes. Td(off): 24 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFB4228
29 parameters
ID (T=100°C)
59A
ID (T=25°C)
83A
Idss (max)
1mA
On-resistance Rds On
12m Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
150V
Assembly/installation
PCB through-hole mounting
C(in)
4530pF
Channel type
N
Cost)
550pF
Drain-source protection
zener diode
Function
PDP Switch
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
20uA
Id(imp)
330A
Number of terminals
3
Operating temperature
-40...+175°C
Pd (Power Dissipation, Max)
330W
Quantity per case
1
RoHS
yes
Td(off)
24 ns
Td(on)
18 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
76 ns
Type of transistor
MOSFET
Vgs(th) min.
3V
Original product from manufacturer
International Rectifier