N-channel transistor IRFB4115, 74A, 104A, 250uA, 0.0093 Ohms, TO-220, TO-220AB, 150V

N-channel transistor IRFB4115, 74A, 104A, 250uA, 0.0093 Ohms, TO-220, TO-220AB, 150V

Quantity
Unit price
1-4
6.57$
5-24
5.98$
25-49
5.54$
50-99
5.19$
100+
4.59$
Quantity in stock: 56

N-channel transistor IRFB4115, 74A, 104A, 250uA, 0.0093 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 250uA. On-resistance Rds On: 0.0093 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. Assembly/installation: PCB through-hole mounting. C(in): 5270pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 490pF. Drain-source protection: yes. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 420A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 380W. Quantity per case: 1. RoHS: yes. Td(off): 18 ns. Td(on): 41 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 86 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 3V. Weight: 1.99g. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFB4115
33 parameters
ID (T=100°C)
74A
ID (T=25°C)
104A
Idss (max)
250uA
On-resistance Rds On
0.0093 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
150V
Assembly/installation
PCB through-hole mounting
C(in)
5270pF
Channel type
N
Conditioning unit
50
Conditioning
plastic tube
Cost)
490pF
Drain-source protection
yes
Function
High Efficiency Synchronous Rectification in SMPS, High Speed Power Switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
20uA
Id(imp)
420A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
380W
Quantity per case
1
RoHS
yes
Td(off)
18 ns
Td(on)
41 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
86 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
3V
Weight
1.99g
Original product from manufacturer
Infineon Technologies