N-channel transistor IRFB4110PBF, 100V, 100V, 3.7m Ohms, TO-220, 130A, 60.4k Ohms, 250uA, TO-220AB, 100V. Vdss (Drain to Source Voltage): 100V. Drain-source voltage (Vds): 100V. On-resistance Rds On: 3.7m Ohms. Housing: TO-220. ID (T=100°C): 130A. ID (T=25°C): 60.4k Ohms. Idss (max): 250uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 9620pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 670pF. Drain-source protection: yes. Drive Voltage: 10V. Features: -. Function: PDP Switch. G-S Protection: no. Gate/source voltage Vgs max: -20V. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id @ Tc=25°C (Continuous Drain Current): 180A. Id(imp): 670A. Information: -. MSL: -. Max drain current: 120A. Mounting Type: THT. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 370W. Polarity: MOSFET N. Power: 370W. Quantity per case: 1. Rds On (Max) @ Id, Vgs: 4.5m Ohms / 75A / 10V. RoHS: yes. Series: HEXFET. Td(off): 25 ns. Td(on): 78 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Weight: 1.99g. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14