N-channel transistor IRFB3306PBF, 60V, 3.3M Ohms, TO-220, 110A, 160A, 250uA, TO-220AB, 60V. Drain-source voltage (Vds): 60V. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 4520pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 500pF. Drain-source protection: yes. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 620A. Max drain current: 160A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 230W. Power: 230W. Quantity per case: 1. RoHS: yes. Td(off): 40 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 31 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 11/06/2025, 22:14