N-channel transistor IRFB31N20D, 21A, 31A, 250uA, 0.082 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 21A. ID (T=25°C): 31A. Idss (max): 250uA. On-resistance Rds On: 0.082 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 2370pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 390pF. Drain-source protection: zener diode. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 124A. Marking on the case: FB32N20D. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Td(off): 26 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14