N-channel transistor IRFB3077PBF, 150A, 210A, 250uA, 0.0028 Ohm, TO-220, TO-220AB, 75V

N-channel transistor IRFB3077PBF, 150A, 210A, 250uA, 0.0028 Ohm, TO-220, TO-220AB, 75V

Quantity
Unit price
1-4
3.96$
5-24
3.43$
25-49
3.08$
50-99
2.85$
100+
2.45$
Quantity in stock: 53

N-channel transistor IRFB3077PBF, 150A, 210A, 250uA, 0.0028 Ohm, TO-220, TO-220AB, 75V. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. On-resistance Rds On: 0.0028 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. Assembly/installation: PCB through-hole mounting. C(in): 9400pF. Channel type: N. Cost): 820pF. Drain-source protection: yes. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 850A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 370W. Quantity per case: 1. Td(off): 69 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

IRFB3077PBF
29 parameters
ID (T=100°C)
150A
ID (T=25°C)
210A
Idss (max)
250uA
On-resistance Rds On
0.0028 Ohm
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
75V
Assembly/installation
PCB through-hole mounting
C(in)
9400pF
Channel type
N
Cost)
820pF
Drain-source protection
yes
Function
High-efficiency synchronous rectification in switching power supplies
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
20uA
Id(imp)
850A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
370W
Quantity per case
1
Td(off)
69 ns
Td(on)
25 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
42 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier