N-channel transistor IRFB11N50A, 7A, 11A, 250uA, 0.52 Ohms, TO-220, TO-220, 500V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.52 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 1423pF. Channel type: N. Cost): 208pF. Drain-source protection: yes. Function: Fast switch, Low gate charge 52nC. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 44A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 170W. Quantity per case: 1. RoHS: yes. Spec info: N-Ch MOSFET, VBRDSS 500V. Td(off): 32 ns. Td(on): 14 ns. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14