N-channel transistor IRF8707G, 9.1A, 11A, 150uA, 0.142 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.1A. ID (T=25°C): 11A. Idss (max): 150uA. On-resistance Rds On: 0.142 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 760pF. Channel type: N. Cost): 170pF. Drain-source protection: yes. G-S Protection: yes. Gate/source voltage Vgs: 4.5V. IDss (min): 1uA. Id(imp): 88A. Marking on the case: IRF8707G. Number of terminals: 3. Operating temperature: -50...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 7.3 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 12 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14