N-channel transistor IRF840PBF, TO220AB, 500V, 500V, 0.85 Ohms, 500V. Housing: TO220AB. Vdss (Drain to Source Voltage): 500V. Drain-source voltage (Vds): 500V. Housing (JEDEC standard): -. On-resistance Rds On: 0.85 Ohms. Drain-source voltage Uds [V]: 500V. Channel type: N. Ciss Gate Capacitance [pF]: 1300pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 8A. Information: -. MSL: -. Manufacturer's marking: IRF840PBF. Max drain current: 8A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Polarity: MOSFET N. Power: 125W. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 49 ns. Switch-on time ton [nsec.]: 14 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14