N-channel transistor IRF840ASPBF, D²-PAK, TO-263, 500V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 500V. Ciss Gate Capacitance [pF]: 1018pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF840ASPBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 26 ns. Switch-on time ton [nsec.]: 11 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14