N-channel transistor IRF840AS, 5.1A, 8A, 250uA, 0.85 Ohms, D2PAK ( TO-263 ), TO-263AB, 500V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Voltage Vds(max): 500V. Assembly/installation: surface-mounted component (SMD). C(in): 1018pF. Channel type: N. Cost): 155pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 32A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14