N-channel transistor IRF840APBF, TO-220AB, 500V
Quantity
Unit price
1-9
3.37$
10+
2.34$
| Quantity in stock: 168 |
N-channel transistor IRF840APBF, TO-220AB, 500V. Housing: TO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 500V. Ciss Gate Capacitance [pF]: 1018pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF840APBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 26 ns. Switch-on time ton [nsec.]: 11 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14
IRF840APBF
16 parameters
Housing
TO-220AB
Drain-source voltage Uds [V]
500V
Ciss Gate Capacitance [pF]
1018pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
8A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.85 Ohms @ 4.8A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRF840APBF
Max temperature
+150°C.
Maximum dissipation Ptot [W]
125W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
26 ns
Switch-on time ton [nsec.]
11 ns
Original product from manufacturer
Vishay (ir)