N-channel transistor IRF840, TO-220, 4.8A, 8A, 250uA, 0.85 Ohms, TO-220AB, 500V. Housing: TO-220. ID (T=100°C): 4.8A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Charge: 63nC. Conditioning: tubus. Cost): 310pF. Drain current: 8A, 5.1A. Drain-source protection: yes. Drain-source voltage: 500V. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 32A. Number of terminals: 3. On-state resistance: 0.85 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Polarity: unipolar. Power: 125W. Quantity per case: 1. RoHS: yes. Td(off): 49 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27