N-channel transistor IRF830PBF, TO220AB, 500V, 500V, 1.5 Ohms, 500V. Housing: TO220AB. Vdss (Drain to Source Voltage): 500V. Drain-source voltage (Vds): 500V. Housing (JEDEC standard): -. On-resistance Rds On: 1.5 Ohms. Drain-source voltage Uds [V]: 500V. Channel type: N. Ciss Gate Capacitance [pF]: 610pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 4.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 2.7A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 4.5A. Information: -. MSL: -. Manufacturer's marking: IRF830PBF. Max drain current: 4.5A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 75W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Polarity: MOSFET N. Power: 74W. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 42 ns. Switch-on time ton [nsec.]: 8.2 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/06/2025, 22:14