N-channel transistor IRF820PBF, TO-220, 500V, 3 Ohms, 500V. Housing: TO-220. Drain-source voltage (Vds): 500V. Housing (JEDEC standard): -. On-resistance Rds On: 3 Ohms. Drain-source voltage Uds [V]: 500V. Assembly/installation: THT. Channel type: N. Charge: 24nC. Ciss Gate Capacitance [pF]: 360pF. Component family: MOSFET, N-MOS. Conditioning: tubus. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 1.5A. Drain current: 2.5A, 1.6A. Drain-source voltage: 500V. Gate breakdown voltage Ugs [V]: 4 v. Gate-source voltage: ±20V. Manufacturer's marking: IRF820PBF. Max drain current: 2.5A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 80W. Number of terminals: 3. On-state resistance: 3 Ohms. Polarity: unipolar. Power: 50W. RoHS: yes. Switch-off delay tf[nsec.]: 33 ns. Switch-on time ton [nsec.]: 8 ns. Type of transistor: N-MOSFET. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/06/2025, 22:14