N-channel transistor IRF8010S, 57A, 80A, 250uA, 12m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 12m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 3850pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 480pF. Drain-source protection: zener diode. Function: High frequency DC-DC converts. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 320A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 260W. Quantity per case: 1. RoHS: yes. Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 99 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14