N-channel transistor IRF7807Z, 8.7A, 11A, 150uA, 0.011 Ohms, SO, SO-8, 30 v. ID (T=100°C): 8.7A. ID (T=25°C): 11A. Idss (max): 150uA. On-resistance Rds On: 0.011 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 770pF. Channel type: N. Cost): 190pF. Drain-source protection: zener diode. Function: integrated circuit for DC-DC converters. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 88A. Number of terminals: 8. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 10 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 31us. Type of transistor: MOSFET. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14