N-channel transistor IRF7807V, 6.6A, 8.3A, 100uA, 0.017 Ohms, SO, SO-8, 30 v. ID (T=100°C): 6.6A. ID (T=25°C): 8.3A. Idss (max): 100uA. On-resistance Rds On: 0.017 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). Channel type: N. Drain-source protection: diode. Function: integrated circuit for DC-DC converters. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 66A. Number of terminals: 8. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 11 ns. Td(on): 6.3 ns. Technology: Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14