N-channel transistor IRF7468PBF, SO8, 40V

N-channel transistor IRF7468PBF, SO8, 40V

Quantity
Unit price
1+
1.68$
Quantity in stock: 1

N-channel transistor IRF7468PBF, SO8, 40V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 40V. Ciss Gate Capacitance [pF]: 2460pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 9.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0015 Ohms @ 9.4A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: F7468. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 20 ns. Switch-on time ton [nsec.]: 7.6 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRF7468PBF
16 parameters
Housing
SO8
Drain-source voltage Uds [V]
40V
Ciss Gate Capacitance [pF]
2460pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
9.4A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.0015 Ohms @ 9.4A
Gate breakdown voltage Ugs [V]
2V
Manufacturer's marking
F7468
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.5W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
20 ns
Switch-on time ton [nsec.]
7.6 ns
Original product from manufacturer
International Rectifier