N-channel transistor IRF7455PBF, SO8, 30 v
Quantity
Unit price
1+
2.24$
| Quantity in stock: 29 |
N-channel transistor IRF7455PBF, SO8, 30 v. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 3480pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 15A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0075 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: F7455. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 51 ns. Switch-on time ton [nsec.]: 17 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14
IRF7455PBF
16 parameters
Housing
SO8
Drain-source voltage Uds [V]
30 v
Ciss Gate Capacitance [pF]
3480pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
15A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.0075 Ohms @ 15A
Gate breakdown voltage Ugs [V]
2V
Manufacturer's marking
F7455
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.5W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
51 ns
Switch-on time ton [nsec.]
17 ns
Original product from manufacturer
International Rectifier