N-channel transistor IRF7413Z, SO, 9.2A, 13A, 150uA, 0.008 Ohms, SO-8, 30 v
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N-channel transistor IRF7413Z, SO, 9.2A, 13A, 150uA, 0.008 Ohms, SO-8, 30 v. Housing: SO. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 150uA. On-resistance Rds On: 0.008 Ohms. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 1210pF. Channel type: N. Charge: 9.5nC. Conditioning unit: 95. Conditioning: plastic tube. Cost): 270pF. Drain current: 13A. Drain-source protection: zener diode. Drain-source voltage: 30V. Function: Ultra-Low Gate Impedance. G-S Protection: no. Gate-source voltage: 20V. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 100A. Number of terminals: 8. On-state resistance: 10M Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Polarity: unipolar. Power: 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 11 ns. Td(on): 8.7 ns. Technology: HEXFET Power MOSFET. Thermal resistance: 50K/W. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14