N-channel transistor IRF7413, 9.2A, 13A, 25uA, 0.011 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 25uA. On-resistance Rds On: 0.011 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 1600pF. Channel type: N. Cost): 680pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 12uA. Id(imp): 58A. Number of terminals: 8. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 52 ns. Td(on): 8.6 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Chipcad. Quantity in stock updated on 11/06/2025, 22:14