N-channel transistor IRF7389PBF, SO8, 30V/-30V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30V/-30V. Ciss Gate Capacitance [pF]: 650/710pF. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 5.9A/-4.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.058 Ohms @ 5.8/-4.9A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: F7389. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.6W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 26/34 ns. Switch-on time ton [nsec.]: 8.1 ns/13 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14