N-channel transistor IRF7343TRPBF, SO8, -55V, 55V/-55V. Housing: SO8. Vdss (Drain to Source Voltage): -55V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V/-55V. Ciss Gate Capacitance [pF]: 740/690pF. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 4.7A/-3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.105 Ohms @ 4.7/-3.4A. Drive Voltage: -. Features: -. Gate breakdown voltage Ugs [V]: -. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 3.4A. Information: -. MSL: -. Manufacturer's marking: F7343. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Mounting Type: SMD. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Polarity: MOSFET N+P. RoHS: yes. Series: HEXFET. Switch-off delay tf[nsec.]: 48/64 ns. Switch-on time ton [nsec.]: 12/22 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14