N-channel transistor IRF7343PBF, SO8, 55V/-55V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V/-55V. Ciss Gate Capacitance [pF]: 740/690pF. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 4.7A/-3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.105 Ohms @ 4.7/-3.4A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: F7343. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 48/64 ns. Switch-on time ton [nsec.]: 12/22 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14