| Quantity in stock: 127 |
N-channel transistor IRF7341, 55V, SO8, SO-8
Quantity
Unit price
1-4
0.91$
5-49
0.69$
50-94
0.65$
95+
0.57$
| Equivalence available | |
| Quantity in stock: 242 |
N-channel transistor IRF7341, 55V, SO8, SO-8. Vdss (Drain to Source Voltage): 55V. Housing: SO8. Housing (according to data sheet): SO-8. Assembly/installation: surface-mounted component (SMD). Channel type: N. Conditioning unit: 95. Conditioning: plastic tube. Drive Voltage: -. Features: -. Function: tf 13ns, td(on) 8.3ns, td(off) 32ns. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 4.7A. Information: -. MSL: -. Mounting Type: SMD. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Polarity: MOSFET N. Quantity per case: 2. RoHS: yes. Series: HEXFET. Technology: HEXFET Power MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 12/18/2025, 19:08
IRF7341
19 parameters
Vdss (Drain to Source Voltage)
55V
Housing
SO8
Housing (according to data sheet)
SO-8
Assembly/installation
surface-mounted component (SMD)
Channel type
N
Conditioning unit
95
Conditioning
plastic tube
Function
tf 13ns, td(on) 8.3ns, td(off) 32ns
Gate/source voltage Vgs max
-20V
Id @ Tc=25°C (Continuous Drain Current)
4.7A
Mounting Type
SMD
Number of terminals
8
Pd (Power Dissipation, Max)
2W
Polarity
MOSFET N
Quantity per case
2
RoHS
yes
Series
HEXFET
Technology
HEXFET Power MOSFET
Original product from manufacturer
International Rectifier