N-channel transistor IRF7317TRPBF, SO8, 30V/-30V
Quantity
Unit price
1-9
1.68$
10-99
1.40$
100-999
1.29$
1000+
1.02$
| Quantity in stock: 351 |
N-channel transistor IRF7317TRPBF, SO8, 30V/-30V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30V/-30V. Ciss Gate Capacitance [pF]: 900/780pF. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 6.6A / -5.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.058 Ohms @ 6/-2.9A. Gate breakdown voltage Ugs [V]: -. Manufacturer's marking: F7317. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.3W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 57/63 ns. Switch-on time ton [nsec.]: 12/22 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/06/2025, 22:14
IRF7317TRPBF
15 parameters
Housing
SO8
Drain-source voltage Uds [V]
30V/-30V
Ciss Gate Capacitance [pF]
900/780pF
Component family
MOSFET, N-MOS, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
6.6A / -5.3A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.029 Ohms/0.058 Ohms @ 6/-2.9A
Manufacturer's marking
F7317
Max temperature
+150°C.
Maximum dissipation Ptot [W]
1.3W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
57/63 ns
Switch-on time ton [nsec.]
12/22 ns
Original product from manufacturer
Infineon