N-channel transistor IRF7313TRPBF, SO8, 30 v
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Unit price
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1.80$
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N-channel transistor IRF7313TRPBF, SO8, 30 v. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 650pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 6.5A/6.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.029 Ohms @ 5.8A/5.8A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: F7313. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 39 ns. Switch-on time ton [nsec.]: 12 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/06/2025, 22:14
IRF7313TRPBF
16 parameters
Housing
SO8
Drain-source voltage Uds [V]
30 v
Ciss Gate Capacitance [pF]
650pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
6.5A/6.5A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.029 Ohms/0.029 Ohms @ 5.8A/5.8A
Gate breakdown voltage Ugs [V]
3V
Manufacturer's marking
F7313
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
39 ns
Switch-on time ton [nsec.]
12 ns
Original product from manufacturer
Infineon