N-channel transistor IRF7313, SO, SO-8
Quantity
Unit price
1-4
0.90$
5-49
0.75$
50-99
0.66$
100-199
0.59$
200+
0.51$
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| Quantity in stock: 1936 |
N-channel transistor IRF7313, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Assembly/installation: surface-mounted component (SMD). Charge: 22nC. Drain current: 6.5A. Drain-source voltage: 30V. Equivalents: IRF7313PBF. Function: N MOSFET transistor. Gate-source voltage: 20V, ±20V. Number of terminals: 8. Polarity: unipolar. Power: 2W. Quantity per case: 2. RoHS: yes. Technology: HEXFET®. Thermal resistance: 62.5K/W. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 11/06/2025, 22:14
IRF7313
17 parameters
Housing
SO
Housing (according to data sheet)
SO-8
Assembly/installation
surface-mounted component (SMD)
Charge
22nC
Drain current
6.5A
Drain-source voltage
30V
Equivalents
IRF7313PBF
Function
N MOSFET transistor
Gate-source voltage
20V, ±20V
Number of terminals
8
Polarity
unipolar
Power
2W
Quantity per case
2
RoHS
yes
Technology
HEXFET®
Thermal resistance
62.5K/W
Original product from manufacturer
Infineon Technologies