N-channel transistor IRF730PBF, TO220AB, 400V, 400V, 1 Ohm, 400V. Housing: TO220AB. Vdss (Drain to Source Voltage): 400V. Drain-source voltage (Vds): 400V. Housing (JEDEC standard): -. On-resistance Rds On: 1 Ohm. Drain-source voltage Uds [V]: 400V. Channel type: N. Ciss Gate Capacitance [pF]: 700pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 5.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1 Ohms @ 3.3A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 5.5A. Information: -. MSL: -. Manufacturer's marking: IRF730PBF. Max drain current: 4.5A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 74W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Polarity: MOSFET N. Power: 75W. Rds On (Max) @ Id, Vgs: 1 Ohms / 3A / 10V. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 38 ns. Switch-on time ton [nsec.]: 10 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14