N-channel transistor IRF7303, SO, 3.9A, 4.9A, 25uA, SO-8, 30 v
Quantity
Unit price
1-4
0.82$
5-49
0.68$
50-94
0.59$
95-189
0.54$
190+
0.46$
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| Quantity in stock: 31 |
N-channel transistor IRF7303, SO, 3.9A, 4.9A, 25uA, SO-8, 30 v. Housing: SO. ID (T=100°C): 3.9A. ID (T=25°C): 4.9A. Idss (max): 25uA. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). Channel type: N. Charge: 16.7nC. Drain current: 4.9A. Drain-source voltage: 30V. Function: 0.05R. Gate-source voltage: 20V, ±20V. IDss (min): 1uA. Id(imp): 20A. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Polarity: unipolar. Power: 2W. Quantity per case: 2. RoHS: yes. Technology: N&N-HEXFET Power MOSFETFET. Thermal resistance: 62.5K/W. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14
IRF7303
24 parameters
Housing
SO
ID (T=100°C)
3.9A
ID (T=25°C)
4.9A
Idss (max)
25uA
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
Channel type
N
Charge
16.7nC
Drain current
4.9A
Drain-source voltage
30V
Function
0.05R
Gate-source voltage
20V, ±20V
IDss (min)
1uA
Id(imp)
20A
Number of terminals
8
Pd (Power Dissipation, Max)
2W
Polarity
unipolar
Power
2W
Quantity per case
2
RoHS
yes
Technology
N&N-HEXFET Power MOSFETFET
Thermal resistance
62.5K/W
Original product from manufacturer
International Rectifier