N-channel transistor IRF7301PBF, SO8, 20V
Quantity
Unit price
1+
0.79$
| Quantity in stock: 19 |
N-channel transistor IRF7301PBF, SO8, 20V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 20V. Ciss Gate Capacitance [pF]: 660pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 4.1A/4.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.05 Ohms @ 2.6A/2.6A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: F7301. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 32 ns. Switch-on time ton [nsec.]: 9 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14
IRF7301PBF
16 parameters
Housing
SO8
Drain-source voltage Uds [V]
20V
Ciss Gate Capacitance [pF]
660pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
4.1A/4.1A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.05 Ohms/0.05 Ohms @ 2.6A/2.6A
Gate breakdown voltage Ugs [V]
2V
Manufacturer's marking
F7301
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
32 ns
Switch-on time ton [nsec.]
9 ns
Original product from manufacturer
International Rectifier