N-channel transistor IRF720PBF, TO-220AB, 400V

N-channel transistor IRF720PBF, TO-220AB, 400V

Quantity
Unit price
1-49
1.12$
50+
0.93$
Quantity in stock: 105

N-channel transistor IRF720PBF, TO-220AB, 400V. Housing: TO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 400V. Ciss Gate Capacitance [pF]: 410pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 3.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF720PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 50W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 30 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRF720PBF
16 parameters
Housing
TO-220AB
Drain-source voltage Uds [V]
400V
Ciss Gate Capacitance [pF]
410pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
3.3A
Drain current through resistor Rds [Ohm] @ Ids [A]
1.8 Ohms @ 2A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRF720PBF
Max temperature
+150°C.
Maximum dissipation Ptot [W]
50W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
30 ns
Switch-on time ton [nsec.]
10 ns
Original product from manufacturer
Vishay (ir)