N-channel transistor IRF710PBF, 400V, 3.6 Ohms, 400V

N-channel transistor IRF710PBF, 400V, 3.6 Ohms, 400V

Quantity
Unit price
1-24
1.12$
25+
0.82$
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Quantity in stock: 306

N-channel transistor IRF710PBF, 400V, 3.6 Ohms, 400V. Drain-source voltage (Vds): 400V. On-resistance Rds On: 3.6 Ohms. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 400V. Channel type: N. Ciss Gate Capacitance [pF]: 170pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.6 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF710PBF. Max drain current: 2A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 36W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 21 ns. Switch-on time ton [nsec.]: 8 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRF710PBF
20 parameters
Drain-source voltage (Vds)
400V
On-resistance Rds On
3.6 Ohms
Drain-source voltage Uds [V]
400V
Channel type
N
Ciss Gate Capacitance [pF]
170pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
2A
Drain current through resistor Rds [Ohm] @ Ids [A]
3.6 Ohms @ 1.2A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRF710PBF
Max drain current
2A
Max temperature
+150°C.
Maximum dissipation Ptot [W]
36W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
21 ns
Switch-on time ton [nsec.]
8 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
Vishay (ir)