N-channel transistor IRF7103TRPBF, SO8
Quantity
Unit price
1-4
1.27$
5-9
0.80$
10-19
0.66$
20-49
0.59$
50+
0.54$
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| Quantity in stock: 25 |
N-channel transistor IRF7103TRPBF, SO8. Housing: SO8. Assembly/installation: SMD. Charge: 12nC. Drain current: 3A. Drain-source voltage: 50V. Gate-source voltage: 20V, ±20V. Polarity: unipolar. Power: 2W. RoHS: yes. Technology: HEXFET®. Thermal resistance: 62.5K/W. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 11/06/2025, 22:14
IRF7103TRPBF
12 parameters
Housing
SO8
Assembly/installation
SMD
Charge
12nC
Drain current
3A
Drain-source voltage
50V
Gate-source voltage
20V, ±20V
Polarity
unipolar
Power
2W
RoHS
yes
Technology
HEXFET®
Thermal resistance
62.5K/W
Original product from manufacturer
Infineon (irf)