N-channel transistor IRF7103PBF, SO8, 50V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 50V. Ciss Gate Capacitance [pF]: 290pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ 3A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: F7103. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 70 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14